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|Section2= |Section3= |Section4= |Section7= |Section8= }} Aluminium arsenide or aluminum arsenide () is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider band gap than gallium arsenide. () can form a superlattice with gallium arsenide () which results in its semiconductor properties.〔Guo, L. Structural, Energetic, and Electronic Properties of Hydrogenated Aluminum Arsenide Clusters. Journal of Nanoparticle Research. Vol. 13 Issue 5 pg. 2029-2039. 2011.〕 Because () and () have almost the same lattice constant, the layers have very little induced strain, which allows them to be grown almost arbitrarily thick. This allows for extremely high performance high electron mobility, HEMT transistors and other quantum well devices.〔S. Adachi, GaAs and Related Materials: Bulk Semiconducting and Superlattice Properties. (World Scientific, Singapore, 1994)〕 ==Properties== It has the following properties: *Thermal expansion coefficient 5 µm/(°C *m) *Debye temperature 417 K *Microhardness 5.0 GPa (50 g load) *Number of atoms in 1 cm3: (4.42-0.17x)·1022〔Dierks, S.. "Aluminum Arsenide - MATERIAL SAFETY DATA." The Fitzgerald Group - MIT. MIT, 1994. Web. *Bulk modulus (7.55+0.26x)·1011 dyn cm−2〔 *Hardness on the Mohs scale: ~ 5〔 *Insolubility in H2O〔 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Aluminium arsenide」の詳細全文を読む スポンサード リンク
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